NTE2974 MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Low On-State Resistance: RDS(on) = 1.1 Max (VGS = 10V, ID = 3A) D Low Input Capacitance: Ciss = 1150pF Typ D High Avalanche Capability Ratings D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-to-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate-to-Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Total Power Dissipation, PT TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mJ Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. PW 10s, Duty Cycle 1%. Note 2. Starting Tch = +25C, RG = 25, VGS = 20V 0. Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Drain-to-Source On-State Resistance Gate-to-Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate-to-Source Leakage Current Symbol RDS(on) VGS(off) |yfs| IDSS IGSS Test Conditions VGS = 10V, ID = 3A VDS = 10V, ID = 1mA VDS = 10V, ID = 3A VDS = 600V, VGS = 0 VGS = 30V, VDS = 0 Min - 2.5 2.0 - - Typ 0.8 - - - - Max 1.1 3.5 - 100 100 Unit V S A nA
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 6A, VGS = 0 IF = 6A, di/dt = 50A/s VGS = 10V, ID = 6A, VDD = 480V VGS = 10V, VDD = 150V, ID = 3A, RG = 10, RL = 37.5 Test Conditions VDS = 10V, VGS = 0, f = 1MHz Min - - - - - - - - - - - - - Typ 1150 260 60 15 15 75 13 40 6 20 1.0 370 1.5 Max - - - - - - - - - - - - - Unit pF pF pF ns ns ns ns nC nC nC V ns C
.420 (10.67) Max .110 (2.79) Isol .147 (3.75) Dia Max .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain
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